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PD -93910
IRLBD59N04E
HEXFET(R) Power MOSFET
l l l l l l
Integrated Temperature Sensing Diode Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fully Avalanche Rated Zener Gate Protected
VDSS = 40V RDS(on) = 0.018 ID = 59A
Description
The IRLBD59N04E is a 40V, N-channel HEXFET(R) power MOSFET with gate protection provided by integrated back to back zener diodes. Temperature sensing is given by the change in forward voltage drop of two antiparallel electrically isolated poly-silicon diodes. The IRLBD59N04E provides cost effective temperature sensing for system protection along with the quality and ruggedness you expect from a HEXFET power MOSFET.
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt IG VESD TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt VGS Clamp Current Electrostatic Votage Rating Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
5 Lead-D2Pak
Max.
59 41 230 130 0.89 10 320 35 13 2.2 50 2.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns mA kV C C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
--- ---
Max.
1.12 40
Units
C/W
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1
4/11/00
IRFLBD59N04E
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Clamp Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
RDS(on) VGS(th) VGS gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff.
Min. 40 --- --- --- 1.0 10 29 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.036 --- --- --- --- --- --- --- --- --- --- --- --- 7.9 110 30 74 2.0 5.0 2310 640 130 2250 580 530
Max. Units Conditions --- V V GS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.018 VGS = 10V, ID = 35A 0.021 VGS = 5.0V, ID = 30A 2.0 V VDS = VGS, ID = 250A 20 V IGSS = 20A --- S VDS = 25V, ID = 35A 25 VDS = 40V, VGS = 0V A 250 VDS = 32V, VGS = 0V, TJ = 150C 1.0 VGS = 5.0V A -1.0 VGS = -5.0V 53 ID = 35A 16 nC VDS = 32V 18 VGS = 5.0V, See Fig. 6 and 13 --- VDD = 20V --- ID = 35A ns --- RG = 5.1, --- VGS = 5.0V, See Fig.10 D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 32V, = 1.0MHz --- VGS = 0V, VDS = 0V to 32V
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 59 --- --- showing the A G integral reverse --- --- 230 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 35A, VGS = 0V --- 54 81 ns TJ = 25C, IF = 35A --- 90 130 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Sense Diode Rating
VFM
VF/TJ
Parameter Sense Diode Maximum Voltage Drop Sense Diode Temperature Coefficient
Min. Typ. Max. Units Conditions 675 --- 725 mV IF = 250A -1.30 -1.40 -1.58 mV/C IF = 250A, See Fig.14
2
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IRLBD59N04E
1000
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP
1000
I D , Drain-to-Source Current (A)
100
10
2.7V
I D , Drain-to-Source Current (A)
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP
100
1 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
2.7V
10 0.1 1
20s PULSE WIDTH TJ = 175 C
10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
ID = 59A
RDS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
2.0
TJ = 25 C
1.5
100
TJ = 175 C
1.0
0.5
10 2.0
V DS = 15V 20s PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 8.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFLBD59N04E
10000 10 VGS = 0V, f = 1 MHZ Ciss = C + C , C gs gd ds SHORTED Crss = C gd Coss = C + C ds gd
ID = 35A V DS = 32V V DS = 20V
VGS , Gate-to-Source Voltage (V)
8
C, Capacitance(pF)
Ciss
6
1000
Coss
4
2
Crss
100 1 10 100 0 0 10 20
FOR TEST CIRCUIT SEE FIGURE 13
30 40 50
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED BY RDS(on)
ISD , Reverse Drain Current (A)
10us
TJ = 175 C
10
I D , Drain Current (A)
100
100 100us
1ms 10 10ms
TJ = 25 C
1
0.1 0.0
V GS = 0 V
0.5 1.0 1.5 2.0 2.5 3.0
1 1
TC = 25 C TJ = 175 C Single Pulse
10 100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRLBD59N04E
60
LIMITED BY PACKAGE
50
VDS VGS RG
RD
D.U.T.
+
I D , Drain Current (A)
40
-VDD
VGS
30
Pulse Width 1 s Duty Factor 0.1 %
20
10
VDS 90%
0 25 50 75 100 125 150 175
TC , Case Temperature
( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 P DM t1 t2
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFLBD59N04E
1 5V
800
EAS , Single Pulse Avalanche Energy (mJ)
TOP BOTTOM
600
VDS
L
D R IV E R
ID 14A 29A 35A
RG
20V tp
D .U .T
IA S
+ V - DD
A
400
0 .0 1
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS tp
200
0 25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( C)
IAS
Fig 12b. Unclamped Inductive Waveforms
QG QGS VG QGD
Sense Diode Voltage Drop (V)
0.80
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
0.70
Charge
IF = 250uA
0.60
Fig 13a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
50K 12V .2F .3F
0.50
D.U.T. VGS
3mA
+ V - DS
0.40 0 20 40 60 80 100 120 140 160 180
T J , Junction Temperature (C)
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 14. Sense Diode Voltage Drop Vs.Temperature
6
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IRLBD59N04E
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
+
-
+
RG VGS * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test
+ VDD
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive P.W. Period D=
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 15. For N-channel HEXFET(R) power MOSFETs
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IRFLBD59N04E
Case Outline 5 Lead-D2Pak (SMD-220)
PIN ASSIGNMENTS 1 2 3 4 5 - G - GATE - T1 - ANODE - D - DRAIN - T2 - CATHODE - S - SOURCE
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25C, L = 0.52mH
RG = 25, IAS = 35A. (See Figure 12)
Current limited by the package ( Die current is 59A) C = 100pF, R = 1.5k
ISD 35A, di/dt 160A/s, VDD V(BR)DSS,
TJ 175C
Pulse width 300s; duty cycle 2%.
** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended soldering techniques refer to application note #AN-994.
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